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IRFP2907

Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating te

文件:115.6 Kbytes 页数:9 Pages

IRF

IRFP2907

HEXFET Power MOSFET Die in Wafer Form

● 100 Tested at Probe ● Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** ● Ultra Low On-Resistance

文件:18.66 Kbytes 页数:1 Pages

IRF

IRFP2907

N-Channel MOSFET Transistor

文件:334.48 Kbytes 页数:2 Pages

ISC

无锡固电

IRFP2907

Integrated Starter Alternator

文件:826.47 Kbytes 页数:9 Pages

KERSEMI

IRFP2907

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

IRFP2907PBF

AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)

Description This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitiv

文件:207.31 Kbytes 页数:10 Pages

IRF

IRFP2907Z

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction

文件:311.77 Kbytes 页数:9 Pages

IRF

IRFP2907ZPBF

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

文件:268.69 Kbytes 页数:9 Pages

IRF

IRFP2907PBF

Advanced Process Technology

文件:224.07 Kbytes 页数:9 Pages

IRF

IRFP2907PBF_15

Advanced Process Technology

文件:224.07 Kbytes 页数:9 Pages

IRF

技术参数

  • OPN:

    IRFP2907PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO247

  • VDS max:

    75 V

  • RDS (on) @10V max:

    4.5 mΩ

  • ID @25°C max:

    209 A

  • QG typ @10V:

    410 nC

  • Special Features:

    Wide SOA

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IRF
TOP-247
3200
原装长期供货!
询价
IR
24+/25+
TO-247
3
原装正品现货库存价优
询价
IR
2015+
TO-247AC
12500
全新原装,现货库存长期供应
询价
IR
24+
原厂封装
5000
原装现货假一罚十
询价
IR
25+
TO-3P
18000
原厂直接发货进口原装
询价
IR
2016+
TO-3P
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
IR
23+
TO247
5000
原装正品,假一罚十
询价
IR
24+
TO247
5000
只做原装公司现货
询价
IR
17+
TO-247
9888
只做原装,现货库存
询价
更多IRFP2907供应商 更新时间2025-12-12 13:51:00