IRFR224规格书应用电路批发供应威世科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IRFR224	文件：175.21 Kbytes Page：6 Pages	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFR224	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技
IRFR224	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224	文件：368.21 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR224,SiHFR224) •Straightlead(IRFU224,SiHFU224) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技
IRFR224	文件：331.85 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRFR224B	文件：670.03 Kbytes Page：9 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
IRFR224PBF	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技
IRFR224PBF	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224PBF	文件：4.12218 Mbytes Page：10 Pages	Dynamic dv/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TR	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技
IRFR224TRA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRL	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技
IRFR224TRL	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRLA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRLA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRLPBF	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技
IRFR224TRLPBFA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.
IRFR224TRLPBFA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.

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详细参数

型号：
IRFR224
功能描述：
MOSFET N-Chan 250V 3.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IRFR224	IR/VISHAY	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市星佑电子有限公司	IRFR224	IR	06+	TO-252	15000	原装库存	询价
深圳好佳好科技有限公司	IRFR224	IR	360000	原厂原装	1305		询价
深圳市昌和盛利电子有限公司	IRFR224	IR	23+	TO-252	35890		询价
深圳市勤思达科技有限公司	IRFR224	IR	12+	TO-252(DPAK)	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市博浩通科技有限公司	IRFR224	VISHAY	23+	D2Pak	7750	全新原装优势	询价
深圳市莱克讯科技有限公司	IRFR224	IR	2017+	SOT-252	48520	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市鑫宇杨电子科技有限公司	IRFR224	IR	2020+	TO252	350000	100%进口原装正品公司现货库存	询价
深圳市永贝尔科技有限公司	IRFR224	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市佳鑫美电子科技有限公司	IRFR224	IOR	22+	TO-252	2987	绝对全新原装现货供应!	询价

更多IRFR224供应商更新时间2024-4-27 10:54:00

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