Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件：853.71 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR224, SiHFR224) • Straight lead (IRFU224, SiHFU224) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：368.21 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

文件：175.21 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件：3.37075 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件：3.37389 Mbytes 页数：7 Pages

KERSEMI

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：331.85 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR224, SiHFR224);

Vishay

威世

HEXFET® Power MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR224, SiHFR224) • Straight lead (IRFU224, SiHFU224) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：368.21 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：670.03 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体