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IRFR9020

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件:1.20947 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9020

Power MOSFET

FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww

文件:1.79403 Mbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9020

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET

文件:238.31 Kbytes 页数:8 Pages

IRF

IRFR9020

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -9.9A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件:299.83 Kbytes 页数:2 Pages

ISC

无锡固电

IRFR9020

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

文件:4.08678 Mbytes 页数:8 Pages

KERSEMI

IRFR9020

isc P-Channel MOSFET Transistor

文件:321.01 Kbytes 页数:2 Pages

ISC

无锡固电

IRFR9020

Power MOSFET

Surface mountable (order as IRFR9020, SiHFR9020)\nStraight lead option (order as IRFU9020, SiHFU9020)\nRepetitive avalanche ratings;

Vishay

威世

IRFR9020PBF

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and

文件:4.08678 Mbytes 页数:8 Pages

KERSEMI

IRFR9020PBF

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件:1.20947 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9020TR

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件:1.20947 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFR9020

  • 功能描述:

    MOSFET P-Chan 50V 9.9 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
06+
TO-252
15000
原装
询价
IR
1415+
TO-252
28500
全新原装正品,优势热卖
询价
IR
24+
原厂封装
4678
原装现货假一罚十
询价
IR
25+
TO252
1030
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IOR
25+
TO-252
2987
绝对全新原装现货供应!
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
询价
VISHAY/威世通
18+
TO-252
41200
原装正品,现货特价
询价
23+
TRANS
65480
询价
VISHAY/威世通
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
更多IRFR9020供应商 更新时间2025-12-13 10:31:00