| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件:1.20947 Mbytes 页数:9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRFR9020 | Power MOSFET FEATURES • Surface mountable (order as IRFR9020, SiHFR9020) • Straight lead option (order as IRFU9020, SiHFU9020) • Repetitive avalanche ratings • Dynamic dV/dt rating • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see ww 文件:1.79403 Mbytes 页数:13 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRFR9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS P-CHANNEL -50 Volt, 0.20 Ohm HEXFET 文件:238.31 Kbytes 页数:8 Pages | IRF | IRF | |
IRFR9020 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -9.9A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件:299.83 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRFR9020 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and 文件:4.08678 Mbytes 页数:8 Pages | KERSEMI | KERSEMI | |
IRFR9020 | isc P-Channel MOSFET Transistor 文件:321.01 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRFR9020 | Power MOSFET Surface mountable (order as IRFR9020, SiHFR9020)\nStraight lead option (order as IRFU9020, SiHFU9020)\nRepetitive avalanche ratings; | Vishay 威世 | Vishay | |
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and 文件:4.08678 Mbytes 页数:8 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件:1.20947 Mbytes 页数:9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d 文件:1.20947 Mbytes 页数:9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号:
IRFR9020
- 功能描述:
MOSFET P-Chan 50V 9.9 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
06+ |
TO-252 |
15000 |
原装 |
询价 | ||
IR |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
IR |
24+ |
原厂封装 |
4678 |
原装现货假一罚十 |
询价 | ||
IR |
25+ |
TO252 |
1030 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IOR |
25+ |
TO-252 |
2987 |
绝对全新原装现货供应! |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | ||
VISHAY/威世通 |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
23+ |
TRANS |
65480 |
询价 | ||||
VISHAY/威世通 |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 |
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