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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED840A	文件：404.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED840A	文件：712.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840B	文件：518.95 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840G	文件：624.15 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM840	文件：316.92 Kbytes Page：1 Pages	IntelAtomE3800FamilyCOMExpressType10MiniModule	AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司	AXIOMTEK
CEP840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU840A	文件：712.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU840A	文件：404.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFI840G-LF	IR	22+	RoHS: Compliant \| pbFree:	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFI840G-LF	IR	23+	RoHS Compliant pbFree	8000	只做原装现货	询价
深圳市星佑电子有限公司	IRFI840G-LF38(94-573	IR	05+	原厂原装	1351	只做全新原装真实现货供应	询价
深圳市深创辉科技有限公司	IRFI840GPBF	VISHAY	09+/15+	TO-220FP	2300	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市博浩通科技有限公司	IRFI840GPBF	VISHAY	23+	TO220	7750	全新原装优势	询价
深圳市凌旭科技有限公司	IRFI840GPBF	VISHAY	2016+	TO-220F	3000	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市豪迈兴电子有限公司	IRFI840GPBF	IR	2339+	TO220	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市科恒伟业电子有限公司	IRFI840GPBF	VISHAY	2016+	TO-220F	6528	房间原装进口现货假一赔十	询价
深圳市欧立现代科技有限公司	IRFI840GPBF	IR	22+	TO220	6980	原装现货,可开13%税票	询价
深圳市达恩科技有限公司	IRFI840GPBF	Vishay	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价

更多IRFI840G-LF供应商更新时间2024-6-14 14:00:00

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