CED840G规格书应用电路原装现货华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CED840G	文件：624.15 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 7A, RDS(ON) = 0.85W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件：624.15 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF840A	文件：440.63 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. 文件：440.63 Kbytes 页数：4 Pages	CET 华瑞	CET
CEF840A	文件：583.99 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：583.99 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF840B	文件：605.09 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：605.09 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CED840G供应商更新时间2025-10-10 9:37:00