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IRFL9014TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技

IRFL9014TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技

IRFL9014TRPBF

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFL9014TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技

IRFL9014TRPBF-BE3AB

Power MOSFET

VishayVishay Siliconix

威世科技

9014

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V

WINGSWing Shing Computer Components

Wing Shing Computer Components

9014

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors NPNsilicon

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

9014

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

9014

FairchildQFETforSynchronousRectification

Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

9014

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

9014

SiliconNPNtransistor

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

9014B

SiliconNPNEpitaxialTransistor

ETC1List of Unclassifed Manufacturers

未分类制造商

9014C

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

9014M

SiliconNPNtransistorinaSOT-23PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

9014MG

SiliconNPNtransistorinaSOT-23PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

9014Q

GENERALPURPOSETRANSISTORSNPNSILICON

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

9014R

GENERALPURPOSETRANSISTORSNPNSILICON

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

9014S

GENERALPURPOSETRANSISTORSNPNSILICON

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

9014T

GENERALPURPOSETRANSISTORSNPNSILICON

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

9014T

SiliconNPNtransistorinaSOT-89PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

详细参数

  • 型号:

    IRFL9014TR

  • 功能描述:

    MOSFET P-Chan 60V 1.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
1604+
SOT223
2158
低价支持实单,可送样品!
询价
IR
2008++
SOT-223
11200
新进库存/原装
询价
IR
05+
原厂原装
30051
只做全新原装真实现货供应
询价
IR
2016+
SOT223
6528
房间原装进口现货假一赔十
询价
IDS
2017+
TO-223
44558
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
IR
2016+
SOT223
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
VISHAY
23+
SOT-223
20000
原装正品,假一罚十
询价
IR
16+
原厂封装
1627
原装现货假一罚十
询价
IOR
23+
TO223
46500
全新原装
询价
IR
05+
SOT223
2900
全新原装进口自己库存优势
询价
更多IRFL9014TR供应商 更新时间2024-4-29 13:10:00