IRF9530SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

IRF9530SPBF

HEXFET짰PowerMOSFET

FEATURES •SurfaceMount •AvailableinTapeAndReel •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •175°COperatingTemperature •FastSwitching •Lead-Free

IRF9530SPBF

PowerMOSFET

IRF9530STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

IRF9530STRLPBFA

PowerMOSFET

IRF9530STRRPBFA

PowerMOSFET

IRFI9530G

PowerMOSFET(Vdss=-100V,Rds(on)=0.30ohm,Id=-7.7A)

IRFI9530G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRFI9530G

PowerMOSFET

FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •P-channel •175°Coperatingtemperature •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleasesee

IRFI9530G

P-ChannelMOSFET

FEATURES ·DrainCurrent-ID=-7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)