Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：229.77 Kbytes 页数：10 Pages

IRF

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

文件：4.0655 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

文件：366.07 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-

文件：30.94 Kbytes 页数：1 Pages

WINBOND

华邦电子

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-

文件：30.94 Kbytes 页数：1 Pages

WINBOND

华邦电子