1A, 100V, 0.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：52.55 Kbytes 页数：6 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：132.41 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third

文件：156.17 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)

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IRF

1A, 100V, 0.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re • 1A, 100V\n• rDS(ON) = 0.600Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• For automatic insertion;

Vishay

威世科技

HEXFET® Power MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third

文件：156.17 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

文件：1.78348 Mbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：132.41 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技