IRFD110中文资料1A, 100V, 0.600 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRFD110规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 1A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISH |
24+ |
SMD |
50 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
VISHAY/威世 |
23+ |
DIP4 |
8160 |
原厂原装 |
询价 | ||
IR(国际整流器) |
24+ |
N/A |
18048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
VISHAY/威世 |
21+ |
HVMDIP-4 |
2534 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
IR |
24+ |
DIP-4 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
VISHAY/威世 |
20+ |
HVMDIP-4 |
69052 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
65480 |
询价 | ||||
IR |
22+ |
DIP4 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
24+ |
HD-1 |
27500 |
原装正品,价格最低! |
询价 |
