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IRFD110PBF中文资料威世科技数据手册PDF规格书
IRFD110PBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available
产品属性
- 型号：
IRFD110PBF
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
DIP-4 |
20000 |
询价 | |||
VISHAY |
21+ |
DIP-4 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
42290 |
订货1周 原装正品 |
询价 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISH |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
VISHAY |
24+ |
DIP-4 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
VISHAY |
23+ |
HVMDIP- |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
VISHAY |
23+ |
DIP-4 |
65400 |
询价 | |||
VISHAY/威世 |
23+ |
DIP4 |
90000 |
一定原装正品/香港现货 |
询价 |
