IRFD110中文资料威世数据手册PDF规格书
IRFD110规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available
产品属性
- 型号：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
VISH |
24+ |
SMD |
50 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
VISHAY/威世 |
24+ |
HVMDIP- |
3800 |
大批量供应优势库存热卖 |
询价 | ||
VISHAY/威世 |
23+ |
DIP4 |
8160 |
原厂原装 |
询价 | ||
IR |
25+ |
DIP4 |
9800 |
全新原装现货,假一赔十 |
询价 | ||
VISHAY/威世 |
21+ |
HVMDIP-4 |
2534 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
VISHAY/威世 |
2022+ |
HVMDIP-4(HEXDIP-4) |
8000 |
只做原装支持实单,有单必成。 |
询价 | ||
IR |
24+ |
DIP-4 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
