IRFD110中文资料威世科技数据手册PDF规格书
IRFD110规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available
产品属性
- 型号：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+23+ |
DIP |
8000 |
新到现货，只做原装进口 |
询价 | ||
IR |
21+ |
DIP-4 |
10000 |
原装现货假一罚十 |
询价 | ||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
22+ |
DIP4 |
8000 |
原装正品支持实单 |
询价 | ||
VISHAY/威世 |
24+ |
HVMDIP- |
3800 |
大批量供应优势库存热卖 |
询价 | ||
VISHAY/威世 |
21+ |
HVMDIP-4 |
2534 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
询价 | |||
IRF |
2020+ |
DIP4 |
140 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ir |
24+ |
500000 |
行业低价,代理渠道 |
询价 | |||
INFINEON/英飞凌 |
23+ |
DIP-4 |
89630 |
当天发货全新原装现货 |
询价 |
