IRFD022中文资料IRF数据手册PDF规格书
IRFD022规格书详情
50 Volt, 0.10 Ohm, 1-Watt HEXDIP
HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HEXFETs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
The HVMDIP 4-pin, Dual-In-Line Package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the state-of-the-art in power device packaging.
FEATURES
■ For Automatic Insertion
■ Compact, End Stackable
■ Fast Switching
■ Low Drive Current
■ Easily Paralleled
■ Excellent Temperature Stability
产品属性
- 型号:
IRFD022
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.2A I(D) | TO-250VAR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
22+ |
HD-1 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
25+ |
DIP-4 |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IRFD022 |
12 |
12 |
询价 | ||||
24+ |
1100 |
询价 | |||||
IR |
23+ |
DIP |
7000 |
询价 | |||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
询价 | |||
IR |
1923+ |
DIP-4 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
23+ |
65480 |
询价 | ||||
IR |
2020+ |
DIP-4 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |