6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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INTERSIL

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

5.0A and 6.0A, 60V-100V rDS(0n) = 0.30Ω and 0.40Ω Features: ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：165.85 Kbytes 页数：5 Pages

GESS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE

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IRF

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

N-Channel Enhancement-Mode Power Field-Effect Transistor

GESS

MOSFETs and JFETs

TT Electronics