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IRFF120

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF120

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

Description TheHEXFET®technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE

IRF

International Rectifier

IRFF120

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

IRFF120

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFM120A

IEEE802.3afCompatible

IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFM120A

AvalancheRuggedTechnology

FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFM120A

AvalancheRuggedTechnology

IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFM120A

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFM120A

AdvancedPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

IRFM120ATF

AvalancheRuggedTechnology

IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRFF120

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 6A 3-Pin TO-39

  • 功能描述:

    TRANS MOSFET N-CH 100V 6A 3PIN TO-39 - Bulk

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    HEXFET, HI-REL - Bulk

  • 功能描述:

    N CHANNEL MOSFET 100V 6A TO-

  • 功能描述:

    MOSFET, N, TO-39

  • 功能描述:

    Single N-Channel 100 V 20 W 18 nC Hexfet Power Mosfet Through Hole - TO-39-3

  • 功能描述:

    N CHANNEL MOSFET, 100V, 6A TO-205AF; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    6A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    300mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

供应商型号品牌批号封装库存备注价格
INTERSIL
24+
TO-39
850
询价
INTERSIL
24+
CAN3
5000
原装现货假一罚十
询价
HARRIS
23+
CAN3
7750
全新原装优势
询价
IR
24+
CN3
5000
只做原装公司现货
询价
GESS
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
HARRIS
18+
CAN3
85600
保证进口原装可开17%增值税发票
询价
IR
1822+
CN3
9852
只做原装正品假一赔十为客户做到零风险!!
询价
21+
CAN
12588
原装正品,自己库存 假一罚十
询价
HARRIS
专业铁帽
CAN3
5890
原装铁帽专营,代理渠道量大可订货
询价
GE
23+
65480
询价
更多IRFF120供应商 更新时间2025-5-27 16:30:00