-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs

-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for appl

文件：327.78 Kbytes 页数：7 Pages

INTERSIL

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. Features: ■ Repetitive Avala

文件：130.24 Kbytes 页数：7 Pages

IRF

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. Features: ■ Repetitive Avala

文件：130.24 Kbytes 页数：7 Pages

IRF

P-Channel MOSFET in a Hermetically sealed TO39

文件：16.67 Kbytes 页数：1 Pages

SEME-LAB

高可靠性功率 MOSFET

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Infineon

英飞凌

-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs

Renesas

瑞萨

MOSFETs and JFETs

TT Electronics