-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：328.01 Kbytes 页数：7 Pages

Intersil

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：135.28 Kbytes 页数：7 Pages

IRF

Avalanche-Energy-Rated P-Channel Power MOSFETs

文件：115.08 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

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SEME-LAB

Seme LAB

-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re • -4.0A, -200V\n• rDS(ON) = 0.800Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

Renesas

瑞萨

HiRel MOSFETs

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Infineon

英飞凌

MOSFETs and JFETs

TT Electronics