REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

文件：135.75 Kbytes 页数：7 Pages

INFINEON

英飞凌

8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

文件：325.05 Kbytes 页数：7 Pages

INTERSIL

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

文件：161.62 Kbytes 页数：5 Pages

GESS

8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

文件：150.53 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel MOSFET in a Hermetically sealed TO39

文件：16.62 Kbytes 页数：1 Pages

SEME-LAB

isc N-Channel MOSFET Transistor

文件：268.69 Kbytes 页数：2 Pages

ISC

无锡固电

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

0.8W N-Channel Enhancement MOSFET

This N-Channel mosfet diode is packaged in TO-205 low profile package, which has a power dissipation of 0.8mW.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

MOSFETs and JFETs

TT Electronics

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A.

GESS