5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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Intersil

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

文件：296.21 Kbytes 页数：3 Pages

TTELEC

N-CHANNEL ENHANCEMENT

文件：42.25 Kbytes 页数：2 Pages

SEME-LAB

5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re • 5.5A, 200V\n• rDS(ON) = 0.400Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Boar;

Renesas

瑞萨

HiRel MOSFETs

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Infineon

英飞凌

MOSFETs and JFETs

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