2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：325.79 Kbytes 页数：7 Pages

Intersil

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also fe

文件：130.84 Kbytes 页数：7 Pages

IRF

N-Channel MOSFET in a Hermetically sealed TO39

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. N-Channel MOSFET. VDSS = 200V ID = 2.25A RDS(ON) = 1.5Ω

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SEME-LAB

Seme LAB

HiRel MOSFETs

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Infineon

英飞凌

2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

MOSFETs and JFETs

TT Electronics