Avalanche-Energy-Rated P-Channel Power MOSFETs

-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gat

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET P-CH 80V 6.5A 3-Pin TO-39

NJS

新泽西半导体

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

SAMSUNG

三星

System Reset

Outline The function of this low reset type IC is to accurately reset systems after detecting the supply voltage at the time of switching power on and instantaneous power off in various CPU and other logic systems. Further, this IC, with its super low consumption current and high precision voltag

文件：65.11 Kbytes 页数：3 Pages

MITSUMI

三美