Avalanche-Energy-Rated P-Channel Power MOSFETs

-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gat

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET P-CH 80V 6.5A 3-Pin TO-39

NJS

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

Samsung

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

isc N-Channel MOSFET Transistor

文件：271.78 Kbytes 页数：2 Pages

ISC

无锡固电