3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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INTERSIL

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

文件：1.0053 Mbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel MOSFET in a Hermetically sealed TO39

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. N-Channel MOSFET. VDSS = 400V ID = 3A RDS(ON) = 1Ω

文件：16.62 Kbytes 页数：1 Pages

SEME-LAB

HiRel MOSFETs

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Infineon

英飞凌

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

MOSFETs and JFETs

TT Electronics