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IRFF9210

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-Channel MOSFET in a Hermetically sealed TO39

SEME-LAB

Seme LAB

IRFF9210

Simple Drive Requirements

IRF

International Rectifier

IRFF9210_15

Simple Drive Requirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半导体

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFF9210

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET P-CH 200V 1.6A 3-Pin TO-39

  • 功能描述:

    TRANS MOSFET P-CH 200V 1.6A 3PIN TO-39 - Bulk

  • 功能描述:

    P CH MOSFET, -200V, 1.5A, TO-205AF; Transistor

  • Polarity:

    P Channel; Continuous Drain Current

  • Id:

    -1.5A; Drain Source Voltage

  • Vds:

    -200V; On Resistance

  • Rds(on):

    3mohm; Rds(on) Test Voltage

  • Vgs:

    -10V; Threshold Voltage Vgs

  • Typ:

    -4V ;RoHS

  • Compliant:

    No

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ir
24+
N/A
6980
原装现货,可开13%税票
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HARRIS
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CAN3
1200
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IRF
23+
NA
19960
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IR
1822+
CN3
9852
只做原装正品假一赔十为客户做到零风险!!
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IOR
专业铁帽
CAN3
1090
原装铁帽专营,代理渠道量大可订货
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IR
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
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HARRIS
24+
CAN3
6430
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军工特供
NA
688
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ir
24+
500000
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IR
22+
CAN3
6000
终端可免费供样,支持BOM配单
询价
更多IRFF9210供应商 更新时间2025-6-5 8:41:00