Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：193 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：268.02 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.36 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

Benefits ● Low Gate-to-Drain Charge to Reduce    Switching Losses ● Fully Characterized Capacitance Including    Effective COSS to Simplify Design, (See App.    Note AN1001) ● Fully Characterized Avalanche Voltage    and Current ● Lead-Free Applications ● High frequency DC-DC converters

文件：714.57 Kbytes 页数：13 Pages

INFINEON

英飞凌

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：342.04 Kbytes 页数：13 Pages

IRF

High frequency DC-DC converters

文件：343 Kbytes 页数：13 Pages

IRF

High frequency DC-DC converters

文件：343 Kbytes 页数：13 Pages

IRF

采用 TO-220AB 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌