Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

文件：1.45555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

文件：244.59 Kbytes 页数：8 Pages

IRF

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Vishay

威世

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Infineon

英飞凌

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

文件：216.93 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

文件：1.45555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

文件：1.45555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：1.46639 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive

文件：1.45555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：2.02105 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司