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IRFBF20

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitveAvalancheRated •FastSwitching •EaseofParalleling

IRF

International Rectifier

IRFBF20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20L

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount(IRFBF20S) •Low-profilethrough-hole(IRFBF20L) •AvailableinTape&Ree

IRF

International Rectifier

IRFBF20L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20L

Power MOSFET

FEATURES •Surface-mount(IRFBF20S,SiHFBF20S) •Low-profilethrough-hole(IRFBF20L,SiHFBF20L) •Availableintapeandreel(IRFBF20S,SiHFBF20S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRFBF20S

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount(IRFBF20S) •Low-profilethrough-hole(IRFBF20L) •AvailableinTape&Ree

IRF

International Rectifier

IRFBF20S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFBF20

  • 功能描述:

    MOSFET N-Chan 900V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
TO-220
9896
询价
IR
06+
TO-220
6000
全新原装 绝对有货
询价
IR
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
IR
24+
TO-220AB
8866
询价
IR
23+
TO-220AB
8600
全新原装现货
询价
IR
24+
原厂封装
466
原装现货假一罚十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO220
8560
受权代理!全新原装现货特价热卖!
询价
VISH
三年内
1983
只做原装正品
询价
IR/VISH
24+
65230
询价
更多IRFBF20供应商 更新时间2025-7-12 16:47:00