Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.52087 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：93.95 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：54.38 Kbytes 页数：6 Pages

Intersil

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件：825.31 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • -0.6A and -07A, -80V and -100V • rDS(ON) =

文件：342.88 Kbytes 页数：6 Pages

HARRIS

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

文件：173.36 Kbytes 页数：6 Pages

IRF

1-WATT RATED POWER MOSFETs

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

文件：218.22 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.64972 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• For automatic insertion;

Vishay

威世科技

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

ONSEMI

安森美半导体