-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • -0.6A and -07A, -80V and -100V • rDS(ON) =

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HARRIS

1-WATT RATED POWER MOSFETs

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

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IRF

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Renesas

瑞萨

Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch

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RENESAS

瑞萨

Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch

The ISL9113 provides a power supply solution for devices powered by three-cell alkaline, NiCd, NiMH or one-cell Li-Ion/Li-Polymer batteries. It offers either a fixed 5V or an adjustable output option for USB-OTG or portable HDMI applications. The device is guaranteed to supply 500mA from a 3V

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INTERSIL

Low Input Voltage and High Efficiency, Synchronous Boost Converter with 1.3A Switch

The ISL9113A provides a power supply solution for devices powered by three-cell alkaline, NiCd, NiMH, or one-cell Li-Ion/Li-Polymer batteries. It offers either a fixed 5V or an adjustable output option for USB-OTG or portable HDMI applications. The device is guaranteed to supply 500mA from a

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INTERSIL