Power MOSFET

FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

文件：312.93 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount (IRFBF20S) • Low-profile through-hole (IRFBF20L) • Available in Tape & Ree

文件：311.85 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

文件：940.9 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

文件：940.9 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：312.93 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世

HEXFET Power MOSFET

文件：373.95 Kbytes 页数：10 Pages

IRF

Power MOSFET

Surface-mount (IRFBF20S, SiHFBF20S)\nLow-profile through-hole (IRFBF20L, SiHFBF20L)\nAvailable in tape and reel (IRFBF20S, SiHFBF20S);

Vishay

威世

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Infineon

英飞凌