HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip

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IRF

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

MOS(场效应管)

Vishay

威世

HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the

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IRF

Simple Drive Requirements

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IRF

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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INTERSIL