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IRFD9020

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in  multiple co

文件:1.031079 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFD9020

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件:264.3 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD9020

HEXFET TRANSISTORS P CHANNEL HEXDIP

HEXFET® TRANSISTORS P CHANNEL HEXDIP™ 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE

文件:442.11 Kbytes 页数:6 Pages

IRF

IRFD9020

Power MOSFET

文件:267.19 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD9020

Power MOSFET

·Dynamic dV/dt rating\n·Repetitive avalanche rated\n·For automatic insertion;

Vishay

威世科技

IRFD9020

HEXFET TRANSISTORS P CHANNEL HEXDIP

Infineon

英飞凌

IRFD9020_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件:264.3 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD9020PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in  multiple co

文件:1.031079 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFD9020PBF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件:264.3 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD9020_17

Power MOSFET

文件:267.19 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IRFD9020

  • 功能描述:

    MOSFET P-Chan 60V 1.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
DIP-4
4503
只做原厂渠道 可追溯货源
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
2450+
DIP-4
9850
只做原装正品现货或订货假一赔十!
询价
IR
24+/25+
250
原装正品现货库存价优
询价
INTERNATIONA
06+
原厂原装
4567
只做全新原装真实现货供应
询价
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
IR
23+
DIP
5000
原装正品,假一罚十
询价
IOR
24+
DIP-4P
340
询价
IR01
24+
DIP
5000
全现原装公司现货
询价
IR
23
全新原装 货期两周
询价
更多IRFD9020供应商 更新时间2025-10-7 16:36:00