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IRFD020

Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the

文件:222.71 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRFD020

Power MOSFET

FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva

文件:248.45 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世

IRFD020

HEXFET TRANSISTORS N-CHANNEL HEXDIP

50 Volt, 0.10 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device rugg

文件:238.94 Kbytes 页数:6 Pages

IRF

IRFD020

Power MOSFET

文件:246.45 Kbytes 页数:9 Pages

TFUNK

威世

IRFD020

Power MOSFET

• For automatic insertion\n• Compact, end stackable\n• Fast switching;

Vishay

威世

IRFD020

HEXFET TRANSISTORS N-CHANNEL HEXDIP

Infineon

英飞凌

IRFD020_V01

Power MOSFET

FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva

文件:248.45 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世

IRFD020PBF

Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the

文件:222.71 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRFD020PBF

Power MOSFET

文件:248.45 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世

详细参数

  • 型号:

    IRFD020

  • 功能描述:

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
DIP4
127
只做原厂渠道 可追溯货源
询价
VISHAY/威世
2450+
DIP-4
9850
只做原装正品现货或订货假一赔十!
询价
IR
24+/25+
206
原装正品现货库存价优
询价
IR
05+
原厂原装
4365
只做全新原装真实现货供应
询价
INTEL
25+
PGA
18000
原厂直接发货进口原装
询价
INTEL
23+
DIP-4
5000
原装正品,假一罚十
询价
IOR
24+
DIP-4P
201
询价
IR
25+
DIP
4300
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
17+
DIP-4
6200
100%原装正品现货
询价
SILICONIX
24+
DIP4P
6980
原装现货,可开13%税票
询价
更多IRFD020供应商 更新时间2025-10-12 16:36:00