0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：53.46 Kbytes 页数：6 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.56402 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling

文件：172.31 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

Infineon

英飞凌

HEXFET Power MOSFET

HEXFET Power MOSFET ● Dynamic dV/dt Rating ● Repetitive Avalanche Rated ● For Automatic Insertion ● End Stackable ● P-Channel ● Fast Switching ● Ease of Paralleling ● Lead-Free

文件：1.75421 Mbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.56402 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

MOSFET P-CH -200V HEXFET MOSFET

Vishay

威世