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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFL214	文件：877.86 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：877.86 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214	文件：278.12 Kbytes Page：8 Pages	Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g 文件：278.12 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214	文件：174.3 Kbytes Page：6 Pages	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.79A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave solder 文件：174.3 Kbytes 页数：6 Pages	IRF	IRF
IRFL214	文件：300 bytes Page：1 Pages	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.79A)	Infineon 英飞凌	Infineon
IRFL214_V01	文件：278.12 Kbytes Page：8 Pages	Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g 文件：278.12 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214PBF	文件：877.86 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：877.86 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214TR	文件：877.86 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：877.86 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214TRPBF	文件：877.86 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：877.86 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFL214PBF	文件：225.07 Kbytes Page：9 Pages	HEXFET짰 Power MOSFET 文件：225.07 Kbytes 页数：9 Pages	IRF	IRF
IRFL214TRPBFA	文件：278.12 Kbytes Page：8 Pages	Power MOSFET 文件：278.12 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay

详细参数

型号：
IRFL214
功能描述：
MOSFET N-Chan 250V 0.79 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	IRFL214	IOR	05/06+	SOT223	67	全新原装100真实现货供应	询价
深圳市一线半导体有限公司	IRFL214	IOR	24+	SOT-223-3	450		询价
深圳市弘为电子有限公司	IRFL214	IR	24+	原厂封装	5000	原装现货假一罚十	询价
深圳市恒创达实业有限公司	IRFL214	IR	17+	SOT-223	6200		询价
深圳市华来深电子有限公司	IRFL214	IOR	23+	TO223	8650	受权代理!全新原装现货特价热卖!	询价
深圳市澳亿芯电子科技有限公司	IRFL214	IR	1709+	SOT-223	32500	普通	询价
深圳市科雨电子有限公司	IRFL214	VISHAY	25+	SOT-223	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	IRFL214	IR	23+	SOT-223	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRFL214	IR	21+	SOT-223	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRFL214	Vishay Siliconix	22+	TO2614 TO261AA	9000	原厂渠道,现货配单	询价

更多IRFL214供应商更新时间2025-10-4 10:31:00

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