IRG4PC50UD

FitRate/EquivalentDeviceHours

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack

IRG4PC50UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50UPBF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan

IRG4PC50W

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.3V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

IRG4PC50W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign

IRG4PC50WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50WPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesigna