| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFZ44V | 60A 60V N CHANNEL POWER MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | FCI Amphenol ICC |  | |
IRFZ44V | Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFZ44V | N-CHANNEL Power MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. |  | |
IRFZ44V | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Ultra Low On-Resistance Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. |  | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
ADVANCED PROCESS TECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
ADVANCED PROCESS TECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
ADVANCED PROCESS TECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IRFZ44V
- 制造商：
International Rectifier
- 功能描述：
MOSFET N TO-220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
TO-220 |
20170 |
询价 | |||
IR |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
询价 | ||
IR |
23+ |
1018 |
TO-220 |
询价 | |||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
23+ |
TO-220 |
19526 |
询价 | |||
IR |
原厂原装 |
2000 |
自己公司全新库存绝对有货 |
询价 | |||
IR |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
IR |
2016+ |
TO220F |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
询价 | ||
IR |
16+ |
原厂封装 |
1450 |
原装现货假一罚十 |
询价 |
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