Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide t

文件：227.4 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissi

文件：1.23386 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide th

文件：354.99 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

文件：3.80987 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide t

文件：227.4 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide th

文件：354.99 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

ADVANCED POWER MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦175°C Operating Temperature ♦Lower Leakage Current: 10µA (Max.) @ VDS= 60V ♦Lower RDS(ON): 0.050µ(Typ.)

文件：221.31 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w

文件：429.32 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

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IRF