| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w 文件：429.32 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS 文件：454.54 Kbytes 页数：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：361.55 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS 文件：454.54 Kbytes 页数：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer w 文件：429.32 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：200.81 Kbytes 页数：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：124.69 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：267.45 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：124.69 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：267.45 Kbytes 页数：10 Pages | IRF | IRF |
技术参数
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
60000mW
- Maximum Operating Temperature：
175°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
60V
- Maximum Continuous Drain Current：
17A
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
TO-220 |
4600 |
原厂原装正品 |
询价 | ||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
FSC |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
台产 |
23+ |
TO-220 |
1500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
05+ |
原厂原装 |
4866 |
只做全新原装真实现货供应 |
询价 | ||
SEC |
24+ |
TO-220 |
101300 |
询价 | |||
IR |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
UNKNOWN |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IR |
2015+ |
DIP/SOP |
19889 |
一级代理原装现货,特价热卖! |
询价 |
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