| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFZ44N | N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | |
IRFZ44N | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFZ44N | Power MOSFET PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel | TEL TRANSYS Electronics Limited | TEL | |
IRFZ44N | N-CHANNEL Power MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | SUNTAC | |
IRFZ44N | N-Channel Power MOSFET DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo | TGS Tiger Electronic Co.,Ltd | TGS | |
IRFZ44N | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IRFZ44N | N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
IRFZ44N | 55A 50V N CHANNEL POWER MOSFET FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication | FCI Amphenol ICC | FCI | |
IRFZ44N | Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFZ44N | 50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | |
IRFZ44N | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | |
IRFZ44N | 60V N-Channel MOSFET | UMWUMW 友台友台半导体 | UMW | |
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET-R Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization: | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
IRFZ44N
- 制造商：
International Rectifier
- 制造商：
International Rectifier
- 功能描述：
MOSFET Transistor, N-Channel, TO-220AB
- 制造商：
International Semiconductor Inc
- 制造商：
Vishay Semiconductors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
新 |
进口原装 |
3000 |
库存现货 |
询价 | ||
IR |
2020+ |
TO-220 |
9880 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
2020+ |
TO-220 |
79000 |
询价 | |||
IRF |
23+ |
TO-220 |
5000 |
原装现货 假一赔十 |
询价 | ||
IRF |
18+ |
TO-220 |
890 |
原装现货、工厂库存 |
询价 | ||
2015+ |
100 |
公司现货库存 |
询价 | ||||
IR |
15+ |
TO220 |
35250 |
原装进口现货,假一罚十 |
询价 | ||
IR |
21+ |
TO-220 |
1560 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
23+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | |||
IR |
21+ |
TO-220 |
6850 |
只做原装正品假一赔十!正规渠道订货! |
询价 |
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