IRG4PC50KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features ●ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V ●Generation4IGBTdesignprovidestigh

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFRE

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4PC50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50KPBF

ShortCircuitRatedUltraFastIGBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50S

FitRate/EquivalentDeviceHours

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

•Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR