首页 >IRG4PC50UDPBF其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.3V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesigna | IRF International Rectifier | IRF |
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