Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：1.38953 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

文件：472.42 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

文件：100.38 Kbytes 页数：17 Pages

IRF

Power MOSFET

文件：463.68 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.2042 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.2042 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRLR024, SiHLR024)\nStraight lead (IRLU024, SiHLU024);

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

文件：472.42 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

文件：942.94 Kbytes 页数：10 Pages

KERSEMI

Logic-Level Gate Drive

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：173.02 Kbytes 页数：11 Pages

IRF