HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, prov

文件：201.62 Kbytes 页数：10 Pages

IRF

丝印：1F；Package：SOT-23；P-Channel Enhancement MOSFET

■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching.

文件：4.98379 Mbytes 页数：7 Pages

UMW

友台半导体

P-Channel 15-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

文件：1.32314 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：1F；Package：SOT-23；P-Channel Enhancement MOSFET

Features Ultra low on-resistance. P-Channel MOSFET. Fast switching.

文件：2.28861 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

P- CHANNEL MOSFET in a SOT-23 Plastic Package

文件：593.77 Kbytes 页数：5 Pages

FOSHAN

蓝箭电子

Power MOSFET

文件：465.97 Kbytes 页数：4 Pages

HOTTECH

合科泰

P-Channel Enhancement MOSFET

文件：2.35606 Mbytes 页数：6 Pages

KEXIN

科信电子

P-Channel Enhancement MOSFET

文件：2.56557 Mbytes 页数：6 Pages

TGS

丝印：1F**；Package：SOT-23；HEXFET Power MOSFET

文件：142.08 Kbytes 页数：9 Pages

IRF

-12V P - Channel MOSFET

Plingsemic

鹏领半导体