Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：214.15 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：339.16 Kbytes 页数：2 Pages

ISC

无锡固电

30V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 完全雪崩额定值\n• 逻辑电平;

Infineon

英飞凌

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

文件：94.58 Kbytes 页数：6 Pages

IRF

Generation 5 Technology

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

文件：330.39 Kbytes 页数：7 Pages

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconn

文件：126.62 Kbytes 页数：7 Pages

IRF

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

文件：100.38 Kbytes 页数：17 Pages

IRF

Generation 5 Technology

文件：308.47 Kbytes 页数：8 Pages

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

文件：116.27 Kbytes 页数：6 Pages

IRF

FETKY MOSFET & SCHOTTKY RECTIFIER

文件：155.47 Kbytes 页数：7 Pages

IRF