INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features ●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V ●Generation 4 IGBT design provides tigh

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IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Short Circuit Rated UltraFast: Optimized for high operation frequencies > 5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRE

文件：650.34 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：651.3 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：651.3 Kbytes 页数：11 Pages

IRF

600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package

600V IGBT 与超快 8-25 kHz 软恢复二极管联合封装到 TO-247AC 封装中。\n   • 经过优化的高工作频率 > 5,0 kHz\n• 额定短路时间为 10 μs @ 125°C, VGE=15V\n• IGBT 的设计提供更紧凑的参数分布和更高的效率\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT，在桥配置中使用\n• 行业标准 TO-247AC 封装\n• 无铅\n\n\n优势:\n• IGBT 提供可实现的出色效率\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT\n ;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 52A 200W TO247AC

Infineon

英飞凌