INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)

UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configura

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IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=60A · High Current Handling Capability · High Input Impedance APPLICATIONS · PFC Circuits · Motor Drives · Uninterruptible power supplies (UPS)

文件：357.78 Kbytes 页数：2 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：515.929 Kbytes 页数：10 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：521.26 Kbytes 页数：10 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：521.26 Kbytes 页数：10 Pages

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Package：TO-274AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 85A 350W SUPER247

INFINEON

英飞凌