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IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20K-SPBF

ShortCircuitRatedUltraFastIGBT

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations •

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforinterme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20MD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20S

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Extremelylowvoltagedrop1.4Vtyp.@10A •S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. •VeryTightVce(on)distribution •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4BC20UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDultrafast, ultra-s

IRFInternational Rectifier

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    IRG4BC20MDPBF

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.1V @ 15V,11A

  • 开关能量:

    410µJ(开),2.03mJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    21ns/463ns

  • 测试条件:

    480V,11A,50 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    IGBT 600V 18A 60W TO220AB

供应商型号品牌批号封装库存备注价格
IR
07+/08+
TO-220-3
199
询价
IR
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
IR
23+
TO-220AB
7750
全新原装优势
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
InfineonTechnologies
2019+
TO-220AB
65500
原装正品货到付款,价格优势!
询价
23+
N/A
59810
正品授权货源可靠
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
INFINEON
1503+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
TO-220
265209
假一罚十原包原标签常备现货!
询价
Infineon
22+
NA
2118
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询价
更多IRG4BC20MDPBF供应商 更新时间2024-5-18 10:50:00