Short Circuit Rated UltraFast IGBT

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations •

文件：298.04 Kbytes 页数：9 Pages

IRF

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 16A 60W D2PAK

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Offers highest efficiency and short circuit capability for interme

文件：251.74 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free Benefits • Offers highest efficiency and short circuit capability for intermed

文件：296.44 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package Benefits • Offers highest efficiency and short circuit capability for intermediate application

文件：200.72 Kbytes 页数：11 Pages

IRF