INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package Benefits • Offers highest efficiency and short circuit capability for intermediate application

文件：200.72 Kbytes 页数：11 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：298.37 Kbytes 页数：12 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

文件：157.98 Kbytes 页数：8 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-para

文件：287.8 Kbytes 页数：10 Pages

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