| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRG4BC20S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( 文件:157.98 Kbytes 页数:8 Pages | IRF | IRF | |
IRG4BC20S | Fit Rate / Equivalent Device Hours 文件:98.39 Kbytes 页数:35 Pages | IRF | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-para 文件:287.8 Kbytes 页数:10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel dio 文件:325.61 Kbytes 页数:10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( 文件:195.96 Kbytes 页数:8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) 文件:382.72 Kbytes 页数:10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) 文件:382.72 Kbytes 页数:10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD 文件:512.049 Kbytes 页数:11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件:285.84 Kbytes 页数:8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件:285.84 Kbytes 页数:8 Pages | IRF | IRF |
产品属性
- 产品编号:
IRG4BC20S
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.6V @ 15V,10A
- 开关能量:
120µJ(开),2.05mJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
27ns/540ns
- 测试条件:
480V,10A,50 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220AB
- 描述:
IGBT 600V 19A 60W TO220AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161512 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INTERNATIONA |
06+ |
原厂原装 |
4285 |
只做全新原装真实现货供应 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
ST |
23+ |
65480 |
询价 | ||||
IR |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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