INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

文件：382.72 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

文件：195.96 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：285.84 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener

文件：167.82 Kbytes 页数：8 Pages

IRF